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Method of Eliminating Lattice Defects in Ion Implantation

IP.com Disclosure Number: IPCOM000054660D
Original Publication Date: 1980-Mar-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Schmitt, A Schorer, G [+details]

Abstract

It is known that in case of boron implantation into silicon there appear crystal defects when the boron dosage exceeds an amount of approximately 3 to 5 x 10/14/ atoms/cm/2/. This implantation damage cannot be fully eliminated even by subsequent thermal anneal of up to 1000 degrees C.