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Gate Controlled Power Rectifier Disclosure Number: IPCOM000054669D
Original Publication Date: 1980-Mar-01
Included in the Prior Art Database: 2005-Feb-13

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Ogura, S Wang, PP [+details]


A gate-controlled three-terminal silicon device is shown which can be used for output rectifying applications in computer power supplies. In the forward conducting state, the P/+/-N/-/ junction 11 is forward-biased and causes significant conductivity modulation in the N/-/ region 12. Therefore, the device is able to conduct a large amount of current with a very low forward drop from the anode 14 to the cathode 17. Also, the device can be controlled from the base (or gate) terminal 13 to choose a desirable injection level, to provide a controllable device forward drop. In the "OFF" state, P/+/-N/-/ junction 11 is reverse-biased. The depletion region of the junction pinches-off and cuts off the current.