Browse Prior Art Database

Double Density VMOS CCD

IP.com Disclosure Number: IPCOM000054776D
Original Publication Date: 1980-Apr-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Heller, LG [+details]

Abstract

A high density charge-coupled device (CCD) memory in which charge is propagated parallel to the V-groove in a VMOS structure is known. The density of such a memory is doubled by electrically isolating one slanted face or wall of the V-groove from the other to form two channels parallel to the V-groove, as indicated in Figs. 1 and 2.