Browse Prior Art Database

Technique to Fabricate Si Resistor in Bipolar IC

IP.com Disclosure Number: IPCOM000054788D
Original Publication Date: 1980-Apr-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Lee, CH [+details]

Abstract

A method is provided for the fabrication of polysilicon resistors which does not require high temperature or extensive heat treatment. These polysilicon resistors can be used in very large-scale integration and provide improved performance in bipolar integrated circuits. Polysilicon resistors have a very high resistance and low thermal and voltage coefficients of resistance. These properties are essential for reduction of circuit standby power and resistor quality improvement. Since the resistors can be built on the surface of a dielectric film with high sheet resistance value, a greater variability for device integration and density increase can be provided.