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Ion Implantation of Emitter Region Through Thick Oxides

IP.com Disclosure Number: IPCOM000054792D
Original Publication Date: 1980-Apr-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Nagarajan, A Sharif, A [+details]

Abstract

Ion implantation for an emitter is usually performed at low energy and high dose, primarily because of the need for shallow emitter depth and high surface concentration.