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Oxidation Process for Double Polysilicon Insulators

IP.com Disclosure Number: IPCOM000054793D
Original Publication Date: 1980-Apr-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Crimi, CF McDonald, MJ Montillo, FJ [+details]

Abstract

In present double polysilicon technology, a low temperature thin gate oxide must be produced while simultaneously growing a thicker oxide on the first polysilicon gate electrode. The thicker oxide on the first polysilicon electrode is required to minimize interlevel shorts between the second polysilicon layer and the first polysilicon electrode. Interlevel shorts have been found to be a problem.