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Increased Dielectric Strength of Thermal Oxide Films by Reactive Ion Etching

IP.com Disclosure Number: IPCOM000054794D
Original Publication Date: 1980-Apr-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Crimi, CF Eames, WS Friedman, JD Montillo, FJ [+details]

Abstract

The dielectric strength of thin films of silicon dioxide used in field effect transistor devices as the gate insulator can be substantially approx. 20g improved by exposing the silicon substrate to a CF reactive ion etching ambient for periods of one to four minutes prior to oxidation. Exposure to longer times will severely degrade the dielectric strength of the silicon dioxide film. The reactive ion etch ambient does not alter the oxide charge or mobile charge levels.