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Acoustical Spectrum Analyzer on a Chip

IP.com Disclosure Number: IPCOM000054801D
Original Publication Date: 1980-Apr-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Fatula, JJ Garbarino, PL Tsang, PJ [+details]

Abstract

Using an anisotropic etch, such as pyrocatechol, a trench structure 5 is formed in the silicon substrate 6 underneath an intact dielectric film 7, as shown in Fig. 1. The dielectric may be composed of, for example, a silicon dioxide bride 8 having dimensions L,W and thickness, T oxide, as shown.