Interpolation Scheme for Multi-Grid Solution of Semiconductor Transport Equations
Original Publication Date: 1980-Apr-01
Included in the Prior Art Database: 2005-Feb-13
The numerical solution of Poisson's equation, electron and hole continuity equations for variables Psi (electrostatic potential), p (hole concentration) and n (electron concentration) gives internal behavior and terminal characteristics of semiconductor devices. One- and two dimensional solutions of these equations on a single grid covering the region of analysis have been obtained in the past. When the number of grid points covering the region of analysis becomes large, the computation time to obtain the solution of Poisson's equation, electron and hole continuity equations may be quite large.