The following operators can be used to better focus your queries.
( ) , AND, OR, NOT, W/#
? single char wildcard, not at start
* multi char wildcard, not at start
(Cat? OR feline) AND NOT dog?
Cat? W/5 behavior
(Cat? OR feline) AND traits
Cat AND charact*
This guide provides a more detailed description of the syntax that is supported along with examples.
This search box also supports the look-up of an IP.com Digital Signature (also referred to as Fingerprint); enter the 72-, 48-, or 32-character code to retrieve details of the associated file or submission.
Concept Search - What can I type?
For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.
Concept search eliminates the need for complex Boolean syntax to inform retrieval. Our Semantic Gist engine uses advanced cognitive semantic analysis to extract the meaning of data. This reduces the chances of missing valuable information, that may result from traditional keyword searching.
Capacitance-voltage (CV) measurements on n-type wafers can be in error due to a metal semiconductor contact on the wafer backside which is of the depletion type.
English (United States)
This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately
75% of the total text.
Page 1 of 2
Elimination of Backside Depletion Capacitance
Capacitance-voltage (CV) measurements on n-type wafers can be in error
due to a metal semiconductor contact on the wafer backside which is of the
Depletion regions may form in the semiconductor giving rise to additional
depletion capacitance which enters into the measurement of the MOS-capacitors
on the front surface, depending on the work function difference between silicon
and the aluminum used to make contact to the wafer backside.
This is particularly problematic when pulsed CV measurements are made
where doping profiles are calculated from the measurements. The backside
depletion depends on the doping level of the silicon substrate, and high doping
can eliminate the unwanted additional capacitance.
To overcome the stated problem, the lightly doped n-type MOS monitor
wafers have diffused or implanted profiles on the front surface which are to be
measured by CV or pulsed CV. The high concentration portion of the profile is
on the front surface and lends itself to a good metal silicon contact. The
erroneous backside depletion capacitance is prevented by contacting the front
The preparation of a MOS monitor wafer, as seen in the figure,
for front surface contact is as follows: 1. Grow device silicon dioxide layer 3 on the n-type silicon
wafer surface 4; 2. Dip the small edge portion 5 of the wafer , for example, 5 mm
deep along the wafer edge, into hydrofluoric acid to remove