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Ultrathin Base, Beam Crystallized Bipolar Transistors

IP.com Disclosure Number: IPCOM000054872D
Original Publication Date: 1980-Apr-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Petersen, KE [+details]

Abstract

A low temperature fabrication technique for bipolar transistors which permit full utilization of submicron geometries in device design is described below.