The following operators can be used to better focus your queries.
( ) , AND, OR, NOT, W/#
? single char wildcard, not at start
* multi char wildcard, not at start
(Cat? OR feline) AND NOT dog?
Cat? W/5 behavior
(Cat? OR feline) AND traits
Cat AND charact*
This guide provides a more detailed description of the syntax that is supported along with examples.
This search box also supports the look-up of an IP.com Digital Signature (also referred to as Fingerprint); enter the 72-, 48-, or 32-character code to retrieve details of the associated file or submission.
Concept Search - What can I type?
For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.
Concept search eliminates the need for complex Boolean syntax to inform retrieval. Our Semantic Gist engine uses advanced cognitive semantic analysis to extract the meaning of data. This reduces the chances of missing valuable information, that may result from traditional keyword searching.
This article describes an algorithm for determining the length and width of an FET (field-effect transistor) device with two diffusion connections.
English (United States)
This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately
77% of the total text.
Page 1 of 2
Algorithm for Determining the Length and Width of an FET Device with Two
This article describes an algorithm for determining the length and width of an
FET (field-effect transistor) device with two diffusion connections.
The accurate measurement of length and width of the channel of an FET
device is important in determining the electrical performance of the circuit
containing the device and for parasitic checking purposes. The algorithm in this
article has been used to determine these values and uses the techniques
described in the three preceding articles.
The plan view shown in Fig. 1 is of the simplest form of FET device to be
found on an LSI (large-scale integration) chip.
The channel is the area of Thin Oxide (TOX) between the two diffusions on
either side. The accurate measurement of the length and width of the channel is
important in calculating the electrical performance of the circuit containing the
device and for parasitic checking purposes.
More complicated versions of the basic device are also used, as shown in
The following algorithm will calculate the length and width of the channel of
any of these examples.
Assume that the thin oxide and two diffusion shapes, which in
conjunction make up an FET device, have been found. 1. Take the thin oxide shape and remove from it the overlap with
each diffusion shape. (Complement function) 2. Calculate the AREA of this shape. (Area function) 3. Expand the shape by a 'small' amount D...