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Resist Modification for Radiative Cooling During Reactive Ion Etching

IP.com Disclosure Number: IPCOM000054917D
Original Publication Date: 1980-Apr-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Lever, RF Kaplan, LH [+details]

Abstract

In reactive ion etch processes, substrate temperatures from 100-300 degrees C lead to thermal radiation which, for a black body, would cover the wavelength range 2-20 microns peaking from 5-8 microns. Silicon, which comprises the bulk of the substrate, is largely transparent in this range and is, therefore, an inefficient emitter. Although, resist (e.g., HC resist) is much less transparent, the resist layer is only of the order of 1 micron thick, and does not greatly increase the emissivity of the wafer-resist combination.