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Laser Crystallization of Deposited Silicon Layers

IP.com Disclosure Number: IPCOM000054921D
Original Publication Date: 1980-Apr-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Brodsky, MH Fowler, AB [+details]

Abstract

While amorphous silicon (Si) deposited on a single crystal Si can be recrystallized by laser beam annealing, deposited amorphous layers in general cannot be annealed as well as layers made amorphous by ion bombardment.