Contact (VIA) Hole Processing Using CF(4)+H(2) Reactive Ion Etching and Liftoff
Original Publication Date: 1980-Apr-01
Included in the Prior Art Database: 2005-Feb-13
This article describes a method of processing contact holes as used in semiconductor device fabrication. Although the example here is described in terms of intermediate metallurgy, as used in contact holes, the same principles apply to fabrication of via studs between layers of metallization.