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A New Approach to Electron Beam Memories

IP.com Disclosure Number: IPCOM000054928D
Original Publication Date: 1980-Apr-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Chance, DA Cohen, MS [+details]

Abstract

Introduction. Electron-beam accessed memory using a MOS target for storage was described several years ago [*]. To cover a large target area with a beam emanating from the electron gun, a two-stage system incorporating a "fly's eye lens" was used. A coarse deflection system first deflected the focussed beam into one of an array of small lenslets. A separate deflector associated with each lenslet provided a focused spot at the target which spot was deflected to the specific location desired. The entire assembly was fabricated by standard CRT techniques, i.e., shaping of metal plates, spotwelding, and glassing operations.