Impedance Gain Control for Bipolar Device
Original Publication Date: 1980-May-01
Included in the Prior Art Database: 2005-Feb-13
A field-effect transistor-type fourth terminal is provided on a bipolar device or transistor to produce external and independent gain adjustment. The fourth terminal, in the form of an insulated gate structure 10, modifies the effective base width and collector area of the bipolar device.