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Voltage Control in High Pressure Diode Reactors

IP.com Disclosure Number: IPCOM000054988D
Original Publication Date: 1980-May-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Chapman, BN [+details]

Abstract

It is known that ion bombardment plays a major role in plasma etching. For example, quartz is not etched by radicals at room temperature unless simultaneously subjected to energetic ion (or electron) bombardment. The etch rate of silicon is enhanced under similar bombardment, but does proceed in its absence. An ideal etching process would have independent control of the radical flux, ion energy and flux, and the various modes of heat input into the substrate (the latter particularly to control photoresist degradation).