Contact Formation by Laser Annealing of Implanted Silicon
Original Publication Date: 1980-May-01
Included in the Prior Art Database: 2005-Feb-13
A method is described, and shown in Figs. 1 and 2, which forms sharp platinum silicide contacts 10 on silicon bodies 11, which avoids excessive platinum penetration into the silicon. A low energy implant typically 10 KeV, of a suitable ion is performed to make amorphous the silicon surface 12 in the contact region, and a blanket platinum (Pt) evaporation or sputter-deposition of about 500 Angstrom is performed to form layer 13. Pt+, Si+ or As+ ions can be used on N-type bodies, and Pt+, Si+ or Ga+ on P-type bodies.