Browse Prior Art Database

Self Aligned Process for Forming Metal Silicide and Polysilicon Composite Base Contact

IP.com Disclosure Number: IPCOM000055002D
Original Publication Date: 1980-May-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Ho, AP Horng, CT [+details]

Abstract

Metal-silicides, such as WSi(2), MOSi(2), PtSi, TaSi(2), etc., have bulk resistivity much lower than the heavily doped P+ polysilicon. A Composite metal-silicide and polysilicon layer can be used to achieve a low resistance contact to a transistor element. In these composited layers polysilicon also provides stress relief for forming the metal-silicide.