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Fig. 1 shows a charge-coupled device (CCD) fabricated on a V-groove using anisotropic etching of a (100)-Si substrate.
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V Groove Charge Coupled Devices
Fig. 1 shows a charge-coupled device (CCD) fabricated on a V-groove using
anisotropic etching of a (100)-Si substrate.
As compared to a planar CCD, the new V-groove (VCCD) structure has a
sensing area that is larger by a factor of 1.74. This gives it the capacity to
receive 1.74 times the amount of incident photon flux, thus increasing its dynamic
range. Also, because its shape will tend to contain reflections within the groove,
the VCCD configuration is less susceptible to reflection loss of incident photons.
The device can be fabricated using either surface channel or buried channel
techniques. Ion implant technology can be used for a buried channel device. An
overlapping gate, such as 2-level poly-Si, may be used. The device may be
operated in 2-phase, 3-phase or 4-phase clock scheme. Applications for this
device include, for example, high density memory, image sensing and delay line.
The use of anisotropic etching for fabricating CCDs can be extended to the
fabrication of solar cells. A proposed structure is shown in Fig. 2. The increased
cell surface area can increase more than 50 percent . A still greater increase will
be expected if the secondary reflection is taken into account.
The fabrication process is relatively simple and economical. A
possible fabrication process is: 1) Wet oxidation after initial cleaning. The thickness of
SiO(2) is determined by the required depth of V-grooves. 2) Align the V-groove opening edge par...