Browse Prior Art Database

Improved Conductivity Polysilicon Lines for MOSFET and Bipolar Technology

IP.com Disclosure Number: IPCOM000055071D
Original Publication Date: 1980-May-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Crowder, BL Zirinsky, S [+details]

Abstract

Presently known self defined gate structures for MOS (metal-oxide semiconductor) devices utilize doped polysilicon interconnections based upon compatibility of the self alignment capability, and improved gate oxide reliability. The major limitation is the high resistance of polysilicon lines, of a practical thickness range (0.25 to 0.35 micron), of the order of 30-40 ohms/sq. (for 2 to 2.5-micron line widths). The application of WSi(2), MoSi(2), TaSi(2), and RhSi, has been demonstrated to provide provide an order of magnitude improvement in conductivity with combined silicide/ polysilicon lines ("polycide") [1,2].