Browse Prior Art Database

Removal of SiO(2) From Doped Silicon Surfaces by Absorption of Laser Light

IP.com Disclosure Number: IPCOM000055074D
Original Publication Date: 1980-May-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Fowler, AB Hodgson, RT [+details]

Abstract

Silicon oxide may be selectively removed from the regions of silicon surface which are more heavily doped than the other regions by briefly flooding the surface with an intense laser beam of correctly chosen wavelength. For example, 1.06 Mum light is absorbed much more efficiently in highly doped material than in lightly doped material. the extra energy absorbed in the silicon will cause greater damage in the SiO(2) layer above the doped region, and the SiO(2) layer will either be blown off completely or it can be etched off faster by normal chemical etching means.