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High Performance Bipolar Transistor with Low C(c)

IP.com Disclosure Number: IPCOM000055111D
Original Publication Date: 1980-May-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Das, G Dumke, WP [+details]

Abstract

Bipolar transistor switching speed is limited to a considerable extent by the capacitance of the collector-base junction C. The C(c) can be reduced in silicon by reducing the collector doping from 2-3x10/16/ to 10/15/ using As.