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Silicon on Sapphire Material Processing

IP.com Disclosure Number: IPCOM000055312D
Original Publication Date: 1980-Jun-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Fang, FF Sai Halasz, G [+details]

Abstract

Strains and defects in a silicon on sapphire (SOS) film may be reduced by rapid annealing, as shown in Fig. 1, using laser, E-beam or incoherent light to remove the strain in the film. The interface region of the silicon and the sapphire is next rendered amorphous by channelled implanting of heavy doses of silicon, as shown in Fig. 2. Finally, the silicon on sapphire is annealed thermally at 600-700 degrees C which produces solid phase epitaxial growth from the unstrained topside silicon down to the sapphire interface, as shown in Fig. 3.