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Fine slits useful in the semiconductor fabrication techniques of resist masking, deposition and implantation masking, can be fabricated using piezoelectric, temperature and etching techniques.
English (United States)
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Width Control of Fine Slits
Fine slits useful in the semiconductor fabrication techniques of resist
masking, deposition and implantation masking, can be fabricated using
piezoelectric, temperature and etching techniques.
In Fig. 1, a view is shown of a piezoelectric-responsive structure.
Member A is a rigid frame enclosing members B and C. Member B rides on
tracks allowing some motion in one dimension toward or away from member A.
Member C is a piezoelectric material, metallized top and bottom, securely
fastened to members A and B. A wire is connected to each metallization of
member C and to a high-voltage power supply.
Depending upon the piezoelectric axes of member C, an appropriate voltage
across member C will change the gap between B and A.
In Fig. 2, a view is shown of a temperature-responsive structure.
Materials A and B are joined only at the regions marked "X".
If material A has a greater temperature coefficient than does material B, then
the structure is assembled with zero clearances at a temperature higher than the
expected temperature range of operation. As the structure cools, a slit is formed
between the two pieces of material A.
If the temperature coefficient relationship is opposite that of the above, then
assembly is performed at a temperature lower than the expected temperature
range of operation.
Fine slits may also be made using the difference in etching response of two
A sandwich structure consisting of at least two d...