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Low Temperature Growth of Silicon On Sapphire for Device Use

IP.com Disclosure Number: IPCOM000055320D
Original Publication Date: 1980-Jun-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Chang, CA [+details]

Abstract

Silicon film grown on sapphire (SOS), useful for device is fabrication, is ordinarily grown at high temperatures approx. 1100 degrees C, using the chemical vapor deposition (CVD) technique. Such a high temperature growth is known to create an appreciable stress in the silicon (Si) film due to the large thermal expansion gradient between the film and substrate.