Browse Prior Art Database

Josephson Device Processing

IP.com Disclosure Number: IPCOM000055325D
Original Publication Date: 1980-Jun-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Bright, AA Proto, GR [+details]

Abstract

Josephson tunnelling devices are known in which electron pairs tunnel across a barrier located between two superconducting electrodes. In the fabrication of these devices, an oxygen sputter etch step is often used prior to metal layer deposition and for formation of the tunnel barrier. However, during the sputter etch step the photoresist stencil is eroded at a rate of about 100 Angstrom/min. This can cause problems with resolution, linewidth, or lift-off, especially when long sputtering times are required. This is particularly important for the base electrode deposition, which uses a very thin resist stencil, and for the tunnel barrier formation.