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Two-Step Epitaxial Process

IP.com Disclosure Number: IPCOM000055402D
Original Publication Date: 1980-Jul-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Srinivasan, GR [+details]

Abstract

One of the main concerns of a CVD (chemical vapor deposited) epitaxial process is the occurrence of autodoping in the epitaxial layers which is particularly severe for high density substrates used in VLSI (very large-scale integration) technology. One promising way to reduce this autodoping is to use a low pressure (40-80 torr) epitaxial process which reduces autodoping typically by an order of magnitude. However, the use of this technique is hampered by the deterioration of epitaxial quality. Thus, it is well known that the defect densities, such as stacking faults and dislocations, are higher in the low pressure epitaxy than those at normal pressure operation.