Browse Prior Art Database

Bipolar Transistor Fabrication

IP.com Disclosure Number: IPCOM000055413D
Original Publication Date: 1980-Jul-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Anantha, NG Bhatia, HS [+details]

Abstract

A high performance bipolar transistor with low collector-base capacitance is fabricated by a method exploiting the differential oxidation rates of N++ and N- silicon.