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Solid State Epitaxial Process for Tunneling Junction Bipolar Devices

IP.com Disclosure Number: IPCOM000055415D
Original Publication Date: 1980-Jul-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Malaviya, SD Reith, TM Srinivasan, GR [+details]

Abstract

Tunneling junction bipolar devices are useful for making high density, high speed random-access memories. A simple process is described for making such memories via solid-state epitaxial growth.