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Tunneling junction bipolar devices are useful for making high density, high speed random-access memories. A simple process is described for making such memories via solid-state epitaxial growth.
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Solid State Epitaxial Process for Tunneling Junction Bipolar Devices
Tunneling junction bipolar devices are useful for making high density, high
speed random-access memories. A simple process is described for making such
memories via solid-state epitaxial growth.
Referring to the figure, a bipolar transistor arrangement is processed in a
conventional manner and then a layer 1 of Al is laid over the N+ collector 3 area
on one side, followed by a thin layer 5 of evaporated Si (typically a few hundred
angstroms). Heating to 500 degrees C makes the Si migrate through the Al to
reach the N+ silicon underneath where it deposits as a single crystal epi layer
which is heavily doped by the Al (P++ type). A good tunneling junction is thus
formed. The theoretical and practical details of the solid-state epitaxy process
which is used here to form the tunneling junction are described in . The details
for the formation of a clean junction are described in . References  J. M.
Poate, K. N. Tu and J. W. Mayer (Eds.) Thin Films: Interdiffusion and Reactions,
Wiley Interscience, 1978, Chapter 12, pp. 20-25.  T. M. Reith and M. J.
Sullivan, "Planarized Solid-State Epitaxial Growth of Si and Its Effect on Schottky
Barrier Diodes," Appl. Phys. Lett. 32, 177-179 (February 1, 1978).
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