Browse Prior Art Database

Zero Biased Junction for Reduction of Alpha Particle Induced FET Leakage

IP.com Disclosure Number: IPCOM000055420D
Original Publication Date: 1980-Jul-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Eardley, DB Henle, RA Liu, PT [+details]

Abstract

FET leakage current flow attributable to alpha particle induced ionization in silicon is reduced by the introduction of a zero biased large area p-n junction extending underneath the FET.