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Zero Biased Junction for Reduction of Alpha Particle Induced FET Leakage Disclosure Number: IPCOM000055420D
Original Publication Date: 1980-Jul-01
Included in the Prior Art Database: 2005-Feb-13

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Eardley, DB Henle, RA Liu, PT [+details]


FET leakage current flow attributable to alpha particle induced ionization in silicon is reduced by the introduction of a zero biased large area p-n junction extending underneath the FET.