The following operators can be used to better focus your queries.
( ) , AND, OR, NOT, W/#
? single char wildcard, not at start
* multi char wildcard, not at start
(Cat? OR feline) AND NOT dog?
Cat? W/5 behavior
(Cat? OR feline) AND traits
Cat AND charact*
This guide provides a more detailed description of the syntax that is supported along with examples.
This search box also supports the look-up of an IP.com Digital Signature (also referred to as Fingerprint); enter the 72-, 48-, or 32-character code to retrieve details of the associated file or submission.
Concept Search - What can I type?
For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.
Concept search eliminates the need for complex Boolean syntax to inform retrieval. Our Semantic Gist engine uses advanced cognitive semantic analysis to extract the meaning of data. This reduces the chances of missing valuable information, that may result from traditional keyword searching.
FET leakage current flow attributable to alpha particle induced ionization in silicon is reduced by the introduction of a zero biased large area p-n junction extending underneath the FET.
English (United States)
This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately
82% of the total text.
Page 1 of 2
Zero Biased Junction for Reduction of Alpha Particle Induced FET Leakage
FET leakage current flow attributable to alpha particle induced ionization in
silicon is reduced by the introduction of a zero biased large area p-n junction
extending underneath the FET.
The source and drain of an N channel FET are conventionally formed from
shallow N regions at the surface of a p- substrate. The source and drain are
normally reversed biased or zero biased with respect to the substrate. The
resulting depletion regions extend to a depth of 2 to 3 micrometers from the
Leakage of the drain junction normally occurs in response to ionization
caused by the penetration of alpha particles into the silicon. The charge resulting
from that ionization is brought to zero, however, by the introduction of zero
biased p-n junction 1 formed between p- epi 2 and N substrate 3. Source 4 of
the FET being protected is grounded while drain 5 is connected to a back biasing
source 6 via load device 7. The p-n junction 1 is maintained at zero bias by N+
reach-through 8 and p+ contact region 9, which are connected together and to
negative voltage source 10.
The p- resistivity of epi 2 is selected to achieve low drain to epi capacitance
and enhancement type FET operation. To hold the epi layer 2 at constant
potential, it is desirable to provide many p+ contact areas such as area 9. The N
substrate 3 resistance may be selected for low resistivity so that only a single
contact 8 per chip is re...