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Fast Rise-Time DTL Circuit with MESFET Load

IP.com Disclosure Number: IPCOM000055421D
Original Publication Date: 1980-Jul-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Anantha, NG Ashton, GJ Bhatia, HS Cavaliere, JR Walsh, JL [+details]

Abstract

In response to a given input voltage transition and for a given amount of current in the load impedance of a DTL (diode transistor logic) circuit, faster rise time is realized in the output voltage transition by using a MESFET (metal semiconductor field-effect transistor) rather than a resistor as the load impedance of the DTL circuit.