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Semiconductor Device Structure with Low Soft Error Rate

IP.com Disclosure Number: IPCOM000055430D
Original Publication Date: 1980-Jul-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Sugerman, A Yun, BH [+details]

Abstract

Fig. 1 shows a semiconductor device structure that has a reduced soft error rate due to alpha-particle radiation when used in semiconductor memories. The essential feature of this structure is the highly doped P+ layer 10 present between the N substrate 11 and P- epitaxial layer 12 which contains the N+ source and drain regions. The P+ layer 10 serves the following purposes: