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Method of Producing Arsenic Implanted Emitters without Crystal Defects

IP.com Disclosure Number: IPCOM000055440D
Original Publication Date: 1980-Jul-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Briska, M Schorer, G [+details]

Abstract

By reoxidation at low temperatures following the implantation of arsenic ions into boron-doped base areas of silicon wafers, the formation of detrimental crystal defects during the production of the emitters is avoided.