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Reproducible Technique for Simultaneous Deposition of Poly EPI on Oxide Silicon Disclosure Number: IPCOM000055522D
Original Publication Date: 1980-Jul-01
Included in the Prior Art Database: 2005-Feb-13

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Silvestri, VJ Tang, DD [+details]


A process is described for simultaneously nucleating silicon on an oxide and epitaxially growing silicon or germanium in windows etched into the oxide without producing build-up of silicon or discontinuities between poly-epi regions at the edges of the epitaxial region due to flux enhancement effects. The process includes a precoating of the oxide surface with amorphous silicon or polysilicon (deposited by CVD (chemical vapor deposition) or other techniques), then opening of the windows.