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Flyback Diode Defect Tester

IP.com Disclosure Number: IPCOM000055552D
Original Publication Date: 1980-Aug-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Dobberstein, EA [+details]

Abstract

High voltage diodes may contain defects which, upon a large recovery current, concentrate the current density in a small region of the diode. This precipitates secondary breakdown, destroying the diode. These defects are not detectable during standard reverse recovery tests.