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Technique for Fabrication of a Polysilicon Resistor or a Polysilicon Base Region for Bipolar Integrated Circuits

IP.com Disclosure Number: IPCOM000055609D
Original Publication Date: 1980-Aug-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Lee, CH [+details]

Abstract

This article describes a technique for fabricating a polysilicon resistor or a polysilicon base for bipolar integrated circuits with density and performance improvement. The technique provides high sheet resistance resistors of low T(CR) and V(CR) for low standby power consumption. The subcollector and base area and junction capacitance are minimized.