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Resist Development Process Disclosure Number: IPCOM000055611D
Original Publication Date: 1980-Aug-01
Included in the Prior Art Database: 2005-Feb-13

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Fredericks, EC [+details]


The resist thinning ratio R/Ro (where R is the development rate of exposed resist and Ro is the development rate of unexposed resist) and the uniformity of development of electron (E)-beam exposed positive phenol-formaldehyde and naphthoquinone-(1,2)-diazide sulfuric acid ester-type resist layers are improved using a concentrated alkaline developer (Shipley 2401 diluted one part developer to 3 parts water) at a low temperature (15 degrees C = +/- 0.5 degrees C).