Browse Prior Art Database

Resist Development Process

IP.com Disclosure Number: IPCOM000055611D
Original Publication Date: 1980-Aug-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Fredericks, EC [+details]

Abstract

The resist thinning ratio R/Ro (where R is the development rate of exposed resist and Ro is the development rate of unexposed resist) and the uniformity of development of electron (E)-beam exposed positive phenol-formaldehyde and naphthoquinone-(1,2)-diazide sulfuric acid ester-type resist layers are improved using a concentrated alkaline developer (Shipley 2401 diluted one part developer to 3 parts water) at a low temperature (15 degrees C = +/- 0.5 degrees C).