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Diffusion Barrier for High E Dielectric Process

IP.com Disclosure Number: IPCOM000055614D
Original Publication Date: 1980-Aug-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Howard, JK [+details]

Abstract

High dielectric constant materials such as titanates (BaTiO(3), CaTiO(3), PbTiO(3)) or PZLT (PZT+L, e.g., solid solution of lead titanate and lead zirconate with lanthanum added) require high temperature deposition (550 degrees C) to crystallize into proper structure for high dielectric constant, E. A conducting nitride (TiN(x), TaN(x), ZrN(x), VN(x)) can be prepared by reactive sputtering to protect the bottom electrode from oxidation, without decreasing capacitance of PZT (PLZT).