Ion Implanted Transistor with PtSi or Pd(2)Si Implantation Mask
Original Publication Date: 1980-Aug-01
Included in the Prior Art Database: 2005-Feb-13
A procedure is outlined for fabricating an ion-implanted transistor using a self-aligned implantation mask of PtSi or Pd(2)Si. Improvements are realized in mask alignment, compatibility with higher processing temperatures, and adequacy of a thinner masking layer. Both single crystal and polysilicon versions of the transistor are described.