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Ion Implanted Transistor with PtSi or Pd(2)Si Implantation Mask Disclosure Number: IPCOM000055615D
Original Publication Date: 1980-Aug-01
Included in the Prior Art Database: 2005-Feb-13

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Related People

Miller, RJ [+details]


A procedure is outlined for fabricating an ion-implanted transistor using a self-aligned implantation mask of PtSi or Pd(2)Si. Improvements are realized in mask alignment, compatibility with higher processing temperatures, and adequacy of a thinner masking layer. Both single crystal and polysilicon versions of the transistor are described.