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Depressed Base Transistor

IP.com Disclosure Number: IPCOM000055616D
Original Publication Date: 1980-Aug-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Miller, RJ [+details]

Abstract

A procedure is described fro fabricating a transistor in which the emitter is on a slight pedestal with respect to the silicon surface in the base region. The emitter is uncompensated, and its sidewalls are oxidized. Because these features lead to less sidewall injection, the transistor's current gain will be improved.