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Formation of Channel Stopper for Deep Trench Isolation Disclosure Number: IPCOM000055620D
Original Publication Date: 1980-Aug-01
Included in the Prior Art Database: 2005-Feb-13

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Horng, CT Mader, SR Michel, AE [+details]


To reduce collector-substrate capacitance, the wafers used in advanced bipolar integrated circuits have to be lightly doped P-substrates. To obtain deep trench isolation, a channel stopper formed at the bottom of the deep trench is necessary to prevent the lightly doped P- substrate from surface inversion.