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Dual Dielectric Capacitor

IP.com Disclosure Number: IPCOM000055632D
Original Publication Date: 1980-Aug-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Howard, JK [+details]

Abstract

High dielectric materials, such as titanates (PbTiO(3),BaTiO(3)) or PZLT (PZT+L, e.g., solid solution of lead titanate and lead zirconate with lanthanum added), yield values of E (dielectric constant) which depend on crystal structure. These structures must be annealed at >/approx. 500 degrees C to achieve high E values. To protect the bottom electrode (during annealing), an oxidation barrier, such as silicon nitride, can be used. The nitride can be chemically vapor deposited (CVD) or plasma enhanced.