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Single Resist Layer Lift-Off Process

IP.com Disclosure Number: IPCOM000055633D
Original Publication Date: 1980-Aug-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Hayden, T Narasimham, MA Taglione, A [+details]

Abstract

Photoresist systems containing an alkali-soluble phenol formaldehyde novolak resin and about 17 percent by weight of solids of 2 diazo 1 oxo naphthalene 5 sulfonic acid diester of dihydroxy benzopheone exhibit the property of surface induction, and the extent of the induction period depends upon the aqueous developer concentration, resist prebake temperature and exposure dosage. There also exists an optimum resist prebake time and temperature range for which the film thinning ratio (FTR) is maximum. A developer system, such as the Shipley 2400 developer sold by the Shipley Company, contains an optimum concentration for which the FTR is maximized.