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This article describes a MOS capacitor whose capacitance can be varied by applying a control voltage to a control circuit galvanically and capacitively decoupled from the capacitor.
English (United States)
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Controllable MOS Capacitor
This article describes a MOS capacitor whose capacitance can be varied by
applying a control voltage to a control circuit galvanically and capacitively
decoupled from the capacitor.
One plate of the capacitor consists of a semiconductor layer 1 of a first
conductivity type P. The other plate is an insulated area electrode 3 applied to
the surface of semiconductor layer 1 over a thin dielectric layer 2. Electrode 3 is
connected to terminal A, while semi-conductor layer 1, via ohmic contact 4, is
connected to the other terminal B of the capacitor. The capacitance between the
two terminals A and B is determined by the surface extension of the plates, the
doping factor of semiconductor layer 1, the type and thickness of dielectric layer
2, and, in particular, by the extension of the barrier layer occurring in
semiconductor layer 1 below electrode 3.
The control circuit comprises at least one semiconductor zone 5 of the
second conductivity type N, which is introduced adjacent to, but outside,
electrode 3, into semiconductor layer 1. Semiconductor zone 5 is connected to a
control terminal C via an ohmic contact 6. By means of a control voltage CV,
biasing the junction between semiconductor zone 5 and semiconductor layer 1 in
the reverse direction and which is applied in between control terminal C and
terminal B of the capacitor, the extension of the barrier layer below electrode 3
and thus the capacitance between terminals A and B is varied b...