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Fabrication of Refractory Metal Disilicides Disclosure Number: IPCOM000055728D
Original Publication Date: 1980-Aug-01
Included in the Prior Art Database: 2005-Feb-13

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d'Heurle, F Petersson, CS Tsai, MY [+details]


Refractory metal disilicides of Mo, W or Ta useful in semiconductor devices for their low resistivity properties and for properties facilitating formation of Schottky barrier rectifying contacts may be formed at low heat by ion implantation of As into thin films of Mo, W or Ta on a silicon monocrystalline or polycrystalline substrate.