Browse Prior Art Database

Passivating Silicon Surface with an Embedded Argon Layer from Sputtering

IP.com Disclosure Number: IPCOM000055729D
Original Publication Date: 1980-Aug-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Chang, CA [+details]

Abstract

A silicon semiconductor device surface can be passivated by sputter embedding a layer of argon atoms.