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Thin film resistors for use at 4.2 degrees K can be fabricated using sequentially deposited layers of In and Au, which form intermetallic compounds with each other.
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Fabrication of In-Au Resistor Films with improved Reproducibility
Thin film resistors for use at 4.2 degrees K can be fabricated using
sequentially deposited layers of In and Au, which form intermetallic compounds
with each other.
It has been experimentally found that the resistivity at 4.2 degrees K of In-Au
films formed on glass substrates in the composition range of about 46-56 percent
Au is invariant for film thicknesses less than about 1300 Angstrom.
This indicates that the mean free path for electron scattering is invariant in
these films when they are less than 1,300 Angstroms. This result should be
useful in applications since the sheet resistance reproducibility in this thickness
range is governed mainly by the dimension of the resistor. Consequently,
improved sheet resistance reproducibility can be obtained by fabricating such
resistors having thicknesses less than 1,300 Angstroms.