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Low Stress Silicon Dioxide Mask for Silicon Nitride Etching

IP.com Disclosure Number: IPCOM000055764D
Original Publication Date: 1980-Sep-01
Included in the Prior Art Database: 2005-Feb-13

Publishing Venue

IBM

Related People

Authors:
Kroll, CT [+details]

Abstract

In the processing of silicon gate field-effect devices, silicon nitride is often used as a passivating layer between the polysilicon and overlying conductive layers. In order to selectively etch the polysilicon a thin layer of silicon dioxide is often deposited to act as an etch mask. Using pyrolytic silicon dioxide has been found to product stress-caused defects in the oxide/nitride interface which cause extraneous etching of the underlying polysilicon.